Three - Dimensional Adaptive Semiconductor Device Simulation
نویسندگان
چکیده
We present results from a three-dimensional device simulator, using adaptive meshing and solving the drift-diffusion equations. The adaption algorithm and the criteria used for adap-tion are discussed. Three devices of industrial interest are presented: a bipolar transistor, a 1.25/zm n-MOS device and a CCD, illustrating the range of devices which may be successfully simulated.
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